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Same model may have multiple batches, images only for reference.
IRF9630STRR Real Image
Same model may have multiple batches, images only for reference.

IRF9630STRR

Part No IRF9630STRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 6.5A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205330-IRF9630STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9630STRR CAD Model

Description

The Vishay 205330-IRF9630STRR is a P-channel MOSFET transistor that is designed to operate in a temperature range of -55°C to 150°C.

  • Operating Temperature: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 6.5A @ 25°C
  • Maximum Rds on @ Id, Vgs: 800 mOhm @ 3.9A, 10V
  • Maximum Gate-Source Voltage: +/-20V
  • Package: D2PAK
  • Mounting: Surface-mount technology
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Power Dissipation: 3W (Ta), 74W (Tc)
  • Maximum Input Capacitance: 700pF @ 25V
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
40+ $1.3636 $54.5440
90+ $1.1189 $100.7010
140+ $1.0839 $151.7460
195+ $1.0490 $204.5550
250+ $1.0140 $253.5000
330+ $0.9091 $300.0030
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