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IRFBC30PBF Real Image IRFBC30PBF real image332
Same model may have multiple batches, images only for reference.
IRFBC30PBF Real Image IRFBC30PBF real image332
IRFBC30PBF Real Image IRFBC30PBF real image332
Same model may have multiple batches, images only for reference.

IRFBC30PBF

Part No IRFBC30PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.6A TO-220AB
Datasheet
IRFBC30PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017576-IRFBC30PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC30PBF CAD Model

Description

The electronic component with Id 167506 is a MOSFET product from Vishay.

  • Package: TO-220AB
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (25°C): 3.6A (Tc)
  • Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 660pF @ 25V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7503 $52.5210
165+ $0.6157 $101.5905
255+ $0.5964 $152.0820
350+ $0.5772 $202.0200
450+ $0.5580 $251.1000
600+ $0.5002 $300.1200
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Availability: 50,000 pieces
MOQ: 70 pcs
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