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Same model may have multiple batches, images only for reference.
IRFBC40ASPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC40ASPBF

Part No IRFBC40ASPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.2A D2PAK
Datasheet
IRFBC40ASPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1036pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017580-IRFBC40ASPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC40ASPBF CAD Model

Description

The IRFBC40ASPBF is an N-channel MOSFET from Vishay.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 6.2A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Input Capacitance: 1036pF @ 25V
  • Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
  • Package: D2PAK
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 125W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9180 $57.5400
65+ $1.5737 $102.2905
100+ $1.5246 $152.4600
140+ $1.4754 $206.5560
180+ $1.4262 $256.7160
235+ $1.2787 $300.4945
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Availability: 1,050 pieces
MOQ: 30 pcs
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