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Same model may have multiple batches, images only for reference.
IRFBC40LC Real Image
Same model may have multiple batches, images only for reference.

IRFBC40LC

Part No IRFBC40LC
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET-R POWER MOSFET | MOSFET N-CH 600V 6.2A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 6.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 39nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1100pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187538-IRFBC40LC
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC40LC CAD Model

Description

Vishay Siliconix presents a high-quality IRFBC40LC electronic component with a Win Source Part Number: 1187538.

  • Mounting Style: Through-hole
  • Technology: N-channel MOSFET
  • Category: Discrete semiconductor products
  • Maximum Power Dissipation: 125W
  • Maximum Drain-Source Breakdown Voltage: 600V
  • Popularity: Medium
  • Supply and Demand: Limited

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