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Same model may have multiple batches, images only for reference.
IRFD024PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD024PBF

Part No IRFD024PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.5A 4-DIP
Datasheet
IRFD024PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 017588-IRFD024PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFD024PBF CAD Model

Description

The Vishay IRFD024PBF is an N-channel MOSFET electronic component that is mounted through hole.

  • Maximum Power Dissipation: 1.3W (Ta)
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 1.5A, 10V
  • Supply and Demand Status: limited
  • Packaging: tube/rail
  • Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.1866 $50.9330
12+ $8.3583 $100.2996
19+ $8.0971 $153.8449
26+ $7.8359 $203.7334
34+ $7.5747 $257.5398
45+ $6.7911 $305.5995
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Availability: 1,188 pieces
MOQ: 5 pcs
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