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IRFL210

Part No IRFL210
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A) | MOSFET N-CH 200V 0.96A SOT223
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 960mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 580mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 140pF at 25V
Power Dissipation (Maximum) 2W, 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 80
MSL Level 1 (Unlimited)
Win Source Part Number 1187722-IRFL210
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFL210 CAD Model

Description

The Vishay Siliconix IRFL210 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drive Voltage (max Rds on, min Rds on): 10V
  • Vds Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 960mA
  • Maximum Power Dissipation: 2W or 3.1W
  • Input Capacitance (Ciss): 140pF @ 25V
  • Package: SOT-223 and TO-261-4/TO-261AA
  • Gate-Source Voltage (maximum): ±20V
  • Gate-Source Voltage Threshold (maximum): 4V @ 250μA
  • Gate Charge (Qg): 8.2nC @ 10V
  • Product Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2381 $50.0010
450+ $0.2231 $100.3950
700+ $0.2155 $150.8500
1,000+ $0.2005 $200.5000
1,300+ $0.1929 $250.7700
1,620+ $0.1854 $300.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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