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Same model may have multiple batches, images only for reference.
IRFPG50PBF Real Image
Same model may have multiple batches, images only for reference.

IRFPG50PBF

Part No IRFPG50PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 1KV 6.1A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 1000V 6.1A TO-247AC
Datasheet
IRFPG50PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 190nC @ 10V
Max Input Capacitance 2800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 017648-IRFPG50PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFPG50
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China, Israel, Mexico
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFPG50PBF CAD Model

Description

The IRFPG50PBF is an N-channel MOSFET from Vishay.

  • Package: Tube/Rail
  • Package: TO-247-3
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 6.1A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 190nC @ 10V
  • Maximum Rds On: 2 Ohm @ 3.6A and 10V
  • Operating Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
23+ $2.1756 $50.0388
57+ $1.7851 $101.7507
87+ $1.7294 $150.4578
120+ $1.6736 $200.8320
155+ $1.6178 $250.7590
207+ $1.4504 $300.2328
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Availability: 13,324 pieces
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