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Same model may have multiple batches, images only for reference.
IRFR1N60APBF Real Image
Same model may have multiple batches, images only for reference.

IRFR1N60APBF

Part No IRFR1N60APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.4A DPAK
Datasheet
IRFR1N60APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 229pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 7 Ohm @ 840mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 117662-IRFR1N60APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR1N60APBF CAD Model

Description

The Vishay 117662-IRFR1N60APBF is an N-Channel MOSFET that is perfect for use in a variety of electronic devices.

  • Maximum Power Dissipation: 36W (Tc)
  • Continuous Drain Current: 1.4A (Tc) @ 25°C
  • Packaging: Tube/rail
  • Mounting: SMD (SMT) technology
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id, Vgs: 7 Ohm @ 840mA, 10V
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3098 $52.3920
95+ $1.0747 $102.0965
145+ $1.0411 $150.9595
200+ $1.0075 $201.5000
260+ $0.9739 $253.2140
345+ $0.8732 $301.2540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,790 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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