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Same model may have multiple batches, images only for reference.
IRFR1N60ATRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR1N60ATRPBF

Part No IRFR1N60ATRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 1.4A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 229pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 7 Ohm @ 840mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017658-IRFR1N60ATRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFR1N60A
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFR1N60ATRPBF CAD Model

Description

The Vishay IRFR1N60ATRPBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.4A @ 25°C (Tc)
  • Maximum Rds On at Id, Vgs: 7 Ohm @ 840mA, 10V
  • Package Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 14nC @ 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Vishay
  • Status: Currently an active product with a high popularity

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Quantity Unit Price Ext. Price
40+ $1.3193 $52.7720
95+ $1.0826 $102.8470
145+ $1.0487 $152.0615
200+ $1.0149 $202.9800
255+ $0.9811 $250.1805
345+ $0.8796 $303.4620
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