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Same model may have multiple batches, images only for reference.
IRFR9020TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9020TRLPBF

Part No IRFR9020TRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 9.9A DPAK
Datasheet
IRFR9020TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 5.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 160842-IRFR9020TRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR9020TRLPBF CAD Model

Description

The Vishay MOSFET is a P-Channel power MOSFET with a maximum power dissipation of 42W (Tc).

  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 9.9A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 14nC @ 10V
  • Max Rds On @ Id, Vgs: 280 mOhm @ 5.7A and 10V
  • Application: motor control, power management, and switching circuits
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Technology: SMD (SMT) technology
  • Operating Temperature Range: from -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
80+ $0.6356 $50.8480
195+ $0.5215 $101.6925
300+ $0.5052 $151.5600
410+ $0.4889 $200.4490
530+ $0.4726 $250.4780
710+ $0.4238 $300.8980
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