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Same model may have multiple batches, images only for reference.
IRFR9110PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9110PBF

Part No IRFR9110PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 3.1A DPAK
Datasheet
IRFR9110PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.7nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047103-IRFR9110PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR9110PBF CAD Model

Description

The Vishay 1047103-IRFR9110PBF is a P-channel MOSFET suitable for various electronic applications.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Applications: Discrete Semiconductor Products
  • Maximum Power Dissipation: 2.5W (Ta), 25W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ Id,Vgs: 1.2 Ohm @ 1.9A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 8.7nC @ 10V
  • Applications: Power Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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