IRFR9110PBF

Part No IRFR9110PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 3.1A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.7nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047103-IRFR9110PBF
Popularity Medium
Supply and Demand Status Sufficient

Description

The Vishay 1047103-IRFR9110PBF is a P-channel MOSFET suitable for various electronic applications. With a medium popularity, this component has sufficient supply and demand status. The component is manufactured by Vishay and is recommended for use in discrete semiconductor products. It has a maximum power dissipation of 2.5W (Ta), 25W (Tc) and a drain-source breakdown voltage of 100V. The MOSFET has a maximum Rds On at Id,Vgs of 1.2 Ohm @ 1.9A, 10V and a gate-source threshold voltage of 4V @ 250μA. It has a maximum gate-source voltage of ±20V and a maximum gate charge of 8.7nC @ 10V. The component is recommended for use in various power applications.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
115+ $0.4370 $50.2550
280+ $0.3590 $100.5200
435+ $0.3470 $150.9450
600+ $0.3360 $201.6000
770+ $0.3250 $250.2500
1,035+ $0.2910 $301.1850
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 46,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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