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Same model may have multiple batches, images only for reference.
IRFU9310PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU9310PBF

Part No IRFU9310PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 400V 1.8A I-PAK
Datasheet
IRFU9310PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 7 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 135262-IRFU9310PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU9310PBF CAD Model

Description

The Vishay IRFU9310PBF MOSFET is a P-channel device with a maximum power dissipation of 50W and a maximum drain-source breakdown voltage of 400V. It is designed for use in discrete semiconductor products and features a TO-251AA package. The MOSFET has a maximum continuous drain current of 1.8A and a maximum gate-source voltage of ±20V. It is a popular choice due to its active status and limited supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5933 $50.4305
210+ $0.4868 $102.2280
320+ $0.4716 $150.9120
440+ $0.4564 $200.8160
570+ $0.4412 $251.4840
760+ $0.3956 $300.6560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,050 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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