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IRFUC20PBF

Part No IRFUC20PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 4.4 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 017725-IRFUC20PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFUC20PBF CAD Model

Description

The Vishay 017725-IRFUC20PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 2A. The maximum Rds On @ Id,Vgs is 4.4 Ohm @ 1.2A, 10V. It has a maximum gate-source voltage of ±20V and a gate-source threshold voltage of 4V @ 250μA. The maximum gate charge is 18nC @ 10V and the maximum input capacitance is 350pF @ 25V. It has a power dissipation of 2.5W (Ta), 42W (Tc) and a drive voltage (Max Rds On, Min Rds On) of 10V. It comes in a TO-251AA case / package and is mounted through hole. It is commonly used and has a high popularity in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,500 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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