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Same model may have multiple batches, images only for reference.
IRLD014PBF Real Image
Same model may have multiple batches, images only for reference.

IRLD014PBF

Part No IRLD014PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 1.7A 4-DIP
Datasheet
IRLD014PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 8.4nC @ 5V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 069711-IRLD014PBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRLD014PBF CAD Model

Description

The Vishay 069711-IRLD014PBF is a N-channel MOSFET with a drain-source breakdown voltage of 60V and continuous drain current of 1.7A at 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 1.7A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 8.4nC @ 5V
  • Maximum Rds On at Id,Vgs: 200 mOhm @ 1A and 5V
  • Package: 4-DIP, Hexdip, HVMDIP
  • Temperature Range: -55°C to 175°C
  • Applications: power management
  • Supply and Demand Status: limited
  • Popularity: medium

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