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Same model may have multiple batches, images only for reference.
IRLL014PBF Real Image
Same model may have multiple batches, images only for reference.

IRLL014PBF

Part No IRLL014PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.7A SOT223
Datasheet
IRLL014PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 8.4nC @ 5V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.6A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017755-IRLL014PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLL014PBF CAD Model

Description

The supply and demand status of this product is limited. This product is a MOSFET with N-channel polarity.

  • Polarity: N-Channel
  • Power Dissipation: 2W (Ta), 3.1W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 2.7A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 8.4nC @ 5V
  • Maximum Input Capacitance: 400pF @ 25V
  • Package: SOT-223
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2910 $50.9250
420+ $0.2388 $100.2960
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,160+ $0.2164 $251.0240
1,550+ $0.1940 $300.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,520 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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