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Same model may have multiple batches, images only for reference.
IRLR110TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR110TRLPBF

Part No IRLR110TRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.3A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.1nC @ 5V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 540 mOhm @ 2.6A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 109928-IRLR110TRLPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRLR110TRLPBF CAD Model

Description

The Vishay IRLR110TRLPBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 2.5W (Ta), 25W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Current: 4.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Size: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Package: reel
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6343 $60.2585
225+ $0.5206 $117.1350
345+ $0.5043 $173.9835
475+ $0.4880 $231.8000
615+ $0.4717 $290.0955
820+ $0.4230 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,750 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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