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Same model may have multiple batches, images only for reference.
IRLZ14STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLZ14STRRPBF

Part No IRLZ14STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 8.4nC @ 5V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.7W (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 6A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 126384-IRLZ14STRRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRLZ14STRRPBF CAD Model

Description

The Vishay IRLZ14STRRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 10A at 25°C.

  • Maximum Rds On at Id, Vgs: 200 mOhm @ 6A, 5V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Gate Charge: 8.4nC @ 5V
  • Maximum Input Capacitance: 400pF @ 25V
  • Supply and Demand: Balanced
  • Package: TO-263-3, D2Pak
  • Quantity per Package: 800 pieces

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