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SI1012CR-T1-GE3

Part No SI1012CR-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R / MOSFET N-CH 20V 0.63A SC-75A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2nC @ 8V
Max Input Capacitance 43pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 240mW (Ta)
Maximum Rds On at Id,Vgs 396 mOhm @ 600mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75, SOT-416
Win Source Part Number 028321-SI1012CR-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si1012CR
Introduction Date March 20, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI1012CR-T1-GE3 CAD Model

Description

The Vishay Si1012CR is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Vishay
  • Type: N-channel MOSFET
  • Application: Discrete semiconductor products
  • Power Dissipation: 240mW
  • Drain-Source Breakdown Voltage: 20V
  • Rds On: 396 mOhm @ 600mA, 4.5V
  • Gate-Source Voltage: ±8V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Package: SC-75A
  • Dimension: SC-75, SOT-416
  • Compliance: Halogen-free compliant
  • EOL Date: 2027
  • Supply and demand status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1188 $50.4900
900+ $0.1113 $100.1700
1,395+ $0.1076 $150.1020
2,000+ $0.1000 $200.0000
2,600+ $0.0963 $250.3800
3,245+ $0.0925 $300.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 88,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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