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Same model may have multiple batches, images only for reference.
SI1012R-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1012R-T1-GE3

Part No SI1012R-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75A T/R / MOSFET N-CH 20V 500MA SC-75A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 0.75nC @ 4.5V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 700 mOhm @ 600mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75A
Win Source Part Number 028322-SI1012R-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si1012R
Introduction Date October 31, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI1012R-T1-GE3 CAD Model

Description

The Vishay Si1012R is a MOSFET transistor with an N-channel polarity.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 500mA @ 25°C
  • Package: SC-75A
  • Operating Temperature: -55°C to 150°C
  • Maximum Power Dissipation: 150mW
  • Maximum Rds On: 700 mOhm @ Id,Vgs of 600mA, 4.5V
  • Gate-Source Threshold Voltage: 900mV @ 250μA

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Quantity Unit Price Ext. Price
35+ $1.4662 $51.3170
85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
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