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Same model may have multiple batches, images only for reference.
SI1013R-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1013R-T1-GE3

Part No SI1013R-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 350MA SC-75A
Datasheet
SI1013R-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 1.5nC @ 4.5V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 350mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75A
Win Source Part Number 028324-SI1013R-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1013R-T1-GE3 CAD Model

Description

The Vishay SI1013R-T1-GE3 is a P-channel MOSFET designed for use in a wide range of applications, including power management, load switching, and battery protection.

  • Maximum Power Dissipation: 150mW
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SC-75A
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 350mA (Ta)
  • Maximum Gate Charge: 1.5nC @ 4.5V
  • Maximum Rds On: 1.2 Ohm @ 350mA, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4365 $50.1975
280+ $0.3582 $100.2960
435+ $0.3470 $150.9450
600+ $0.3358 $201.4800
775+ $0.3246 $251.5650
1,035+ $0.2910 $301.1850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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