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Same model may have multiple batches, images only for reference.
SI1025X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1025X-T1-GE3

Part No SI1025X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 60V 0.19A SC-89
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 190mA
Maximum Rds On at Id,Vgs 4 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 1.7nC @ 15V
Max Input Capacitance 23pF @ 25V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 106656-SI1025X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1025X-T1-GE3 CAD Model

Description

This electronic component is a dual P-channel FET type manufactured by Vishay.

  • Feature: Logic level gate
  • Category: Discrete semiconductor products
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: SC-89-6
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 190mA @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 1.7nC @ 15V
  • Maximum Input Capacitance: 23pF @ 25V
  • Maximum Rds On: 4 Ohm @ 500mA, 10V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2933 $51.3275
420+ $0.2407 $101.0940
645+ $0.2331 $150.3495
890+ $0.2256 $200.7840
1,150+ $0.2181 $250.8150
1,535+ $0.1955 $300.0925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 115,800 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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