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Same model may have multiple batches, images only for reference.
SI1056X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1056X-T1-E3

Part No SI1056X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.32A SOT563F
Datasheet
SI1056X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 8.7nC @ 5V
Max Input Capacitance 400pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 89 mOhm @ 1.32A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 028337-SI1056X-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1056X-T1-E3 CAD Model

Description

The Vishay MOSFET is a N-Channel polarity electronic component that can be used in various applications.

  • Manufacturer: Vishay
  • Type: MOSFET
  • Polarity: N-Channel
  • Maximum Power Dissipation: 236mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate Charge: 8.7nC @ 5V
  • Maximum Input Capacitance: 400pF @ 10V
  • Maximum Rds On @ Id,Vgs: 89 mOhm @ 1.32A, 4.5V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3185 $58.9225
445+ $0.2614 $116.3230
685+ $0.2533 $173.5105
945+ $0.2451 $231.6195
1,220+ $0.2369 $289.0180
1,635+ $0.2124 $347.2740
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Availability: 3,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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