The Vishay Siliconix MOSFET, with a Win Source Part Number of 964880-SI1078X-T1-GE3, is an N-channel FET that operates at a drain to source voltage (Vdss) of 30 V and has a current - continuous drain (Id) of 1.02A (Tc) @ 25°C. Its Rds On (Max) @ Id, Vgs is 142mOhm @ 1A, 10V and Vgs(th) (Max) @ Id is 1.5V @ 250μA. The power dissipation (Max) of this MOSFET is 240mW (Tc) and it has a gate charge (Qg) (Max) @ Vgs of 3 nC @ 4.5 V. Its input capacitance (Ciss) (Max) @ Vds is 110 pF @ 15 V and its Vgs (Max) is ±12V. It has a temperature range of -55°C ~ 150°C (TJ) and its drive voltage (Max Rds On, Min Rds On) is 2.5V, 10V. It is categorized under Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single and its series is TrenchFET®. It has a package of tape & reel and is mounted using SMD (SMT) technology. Its standard package is 3,000 and its package/case is SOT-563, SOT-666.