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SI1304BDL-T1-GE3

Part No SI1304BDL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 0.9A SC-70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 2.7nC @ 4.5V
Max Input Capacitance 100pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 340mW (Ta), 370mW (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 900mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 115043-SI1304BDL-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1304BDL-T1-GE3 CAD Model

Description

Vishay’s SI1304BDL-T1-GE3 is a MOSFET that belongs to the discrete semiconductor products category.

  • Popularity: Medium
  • Supply and Demand: Balanced
  • Applications: power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2867 $50.1725
425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
1,175+ $0.2132 $250.5100
1,570+ $0.1912 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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