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Same model may have multiple batches, images only for reference.
SI1330EDL-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1330EDL-T1-E3

Part No SI1330EDL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 240MA SOT323-3
Datasheet
SI1330EDL-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 280mW (Ta)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 250mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 028342-SI1330EDL-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1330EDL-T1-E3 CAD Model

Description

The SI1330EDL-T1-E3 is an N-channel MOSFET from Vishay.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 240mA (Ta)
  • Package: SC-70-3
  • Applications: electronic applications that require high-speed switching

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4123 $59.7835
345+ $0.3384 $116.7480
530+ $0.3278 $173.7340
730+ $0.3173 $231.6290
945+ $0.3067 $289.8315
1,265+ $0.2749 $347.7485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,500 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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