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Same model may have multiple batches, images only for reference.
SI1414DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1414DH-T1-GE3

Part No SI1414DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4A SOT-363
Datasheet
SI1414DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 8V
Max Input Capacitance 560pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095687-SI1414DH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1414DH-T1-GE3 CAD Model

Description

The Vishay electronic component is a SI1414DH-T1-GE3 model with a maximum power dissipation of 1.56W (Ta), 2.8W (Tc) and a drain-source breakdown voltage of 30V.

  • Power Dissipation: 1.56W (Ta), 2.8W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Technology: MOSFET
  • Polarity: N-Channel
  • Maximum Rds On at Id,Vgs: 46 mOhm @ 4A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0947 $57.7670
1,495+ $0.0774 $115.7130
2,310+ $0.0751 $173.4810
3,175+ $0.0728 $231.1400
4,100+ $0.0705 $289.0500
5,455+ $0.0635 $346.3925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,400 pieces
MOQ: 610 pcs
Order Increment : 1 pcs
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