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Same model may have multiple batches, images only for reference.
SI1422DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1422DH-T1-GE3

Part No SI1422DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 4A SC70-6
Datasheet
SI1422DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 20nC @ 8V
Max Input Capacitance 725pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095689-SI1422DH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1422DH-T1-GE3 CAD Model

Description

The Vishay SI1422DH-T1-GE3 is an N-channel MOSFET technology with a polarity of SMD (SMT).

  • Technology: MOSFET
  • Polarity: N-Channel, SMD (SMT)
  • Power Dissipation: 1.56W (Ta) and 2.8W (Tc)
  • Drive Voltage: 1.8V, 4.5V (Max Rds On, Min Rds On)
  • Application: Discrete Semiconductor Product
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SC-70-6 (SOT-363)
  • Dimensions: 6-TSSOP, SC-88, SOT-363
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 20nC @ 8V
  • Maximum Input Capacitance: 725pF @ 6V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On at Id, Vgs: 26 mOhm @ 5.1A, 4.5V

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90+ $1.1594 $104.3460
135+ $1.1232 $151.6320
185+ $1.0870 $201.0950
240+ $1.0507 $252.1680
320+ $0.9420 $301.4400
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