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SI1441EDH-T1-BE3

Part No SI1441EDH-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4A/4A SC70-6  /  P-Channel 20 V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Sample
Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs 41mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 8 V
Vgs (Max) ±10V
Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number SI1441
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SI1441EDH-T1-BE3CT,742-SI1441EDH-T1-BE3DKR,742-SI1441EDH-T1-BE3TR
Standard Package 3,000
Win Source Part Number 1140605-SI1441EDH-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI1441EDH-T1-BE3 CAD Model

Description

The Vishay Siliconix SI1441EDH-T1-BE3 is a P-channel MOSFET transistor that has a drain to source voltage of 20 V and a continuous drain current of 4A.

  • Drain to Source Voltage: 20 V
  • Continuous Drain Current: 4A
  • Maximum Rds On: 41mOhm @ 5A, 4.5V
  • Gate Charge: 33 nC @ 8 V
  • Mounting Type: Surface-mount device
  • Package: 6-TSSOP, SC-88, SOT-363
  • Operating Temperature: -55°C to 150°C
  • Category: Discrete semiconductor products
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2667 $58.6740
530+ $0.2189 $116.0170
820+ $0.2121 $173.9220
1,130+ $0.2053 $231.9890
1,460+ $0.1984 $289.6640
1,950+ $0.1779 $346.9050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,690 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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