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Same model may have multiple batches, images only for reference.
SI1488DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1488DH-T1-GE3

Part No SI1488DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.1A SC70-6
Datasheet
SI1488DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 530pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 49 mOhm @ 4.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095700-SI1488DH-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1488DH-T1-GE3 CAD Model

Description

The Vishay SI1488DH-T1-GE3 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.5W (Ta), 2.8W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Drive Voltage: 1.8V, 4.5V
  • Maximum Rds On @ Id,Vgs: 49 mOhm @ 4.6A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 10nC @ 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity Rating: Medium

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