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Same model may have multiple batches, images only for reference.
SI1903DL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1903DL-T1-GE3

Part No SI1903DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.41A SC70-6
Datasheet
SI1903DL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 410mA
Maximum Rds On at Id,Vgs 995 mOhm @ 410mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.8nC @ 4.5V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 113693-SI1903DL-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1903DL-T1-GE3 CAD Model

Description

The SI1903DL-T1-GE3 is an electronic component manufactured by Vishay.

  • Categories: Discrete semiconductor products
  • Product Status: Obsolete (EOL)
  • Description: Widely used, high-quality performance and reliability
  • Maximum Power Dissipation: 270mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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