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Same model may have multiple batches, images only for reference.
SI1988DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1988DH-T1-E3

Part No SI1988DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual N-Channel 20-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Maximum) @ Id, Vgs 168 mOhm @ 1.4A, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 4.1nC @ 8V
Input Capacitance (Ciss) (Maximum) @ Vds 110pF @ 10V
Power - Max 1.25W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 6-TSSOP, SC-88, SOT-363
Manufacturer Package SC-70-6 (SOT-363)
Win Source Part Number 1248799-SI1988DH-T1-E3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Family Name Si1988DH
Introduction Date October 25, 2006
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SI1988DH-T1-E3 CAD Model

Description

The Vishay SI1988DH-T1-E3 is a TrenchFET series electronic component that is used in various applications.

  • Popularity: medium
  • Supply and demand status: limited
  • Design: efficient logic level gate
  • Suitable for: use in a variety of electronic devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0484 $62.9040
135+ $0.8602 $116.1270
210+ $0.8334 $175.0140
290+ $0.8066 $233.9140
375+ $0.7796 $292.3500
500+ $0.6990 $349.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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