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SI2301CDS-T1-E3

Part No SI2301CDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 405pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)
Maximum Rds On at Id,Vgs 112 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 117471-SI2301CDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SI2301CDS
Introduction Date July 29, 2008
ECCN EAR99
Country of Origin China, Taiwan
Halogen Free Not Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI2301CDS-T1-E3 CAD Model

Description

The SI2301CDS-T1-E3 is a P-channel MOSFET that is ideal for use in various discrete semiconductor products manufactured by Vishay.

  • Supply and Demand Status: Limited
  • EOL Date (Estimated): 2027
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 2.5V to 4.5V
  • Maximum Rds On @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,170+ $0.0428 $50.0760
2,495+ $0.0401 $100.0495
3,870+ $0.0388 $150.1560
5,560+ $0.0360 $200.1600
7,205+ $0.0347 $250.0135
9,010+ $0.0333 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,230 pieces
MOQ: 1170 pcs
Order Increment : 1 pcs
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