The SI2305ADS-T1-GE3 is a P-Channel MOSFET manufactured by Vishay.

• Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
• Mounting: SMD (SMT)
• Package: SOT-23-3 (TO-236)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Drain-Source Breakdown Voltage: 8V
• Continuous Drain Current @ 25°C: 5.4A (Tc)
• Gate-Source Threshold Voltage: 800mV @ 250μA
• Max Gate Charge: 15nC @ 4.5V
• Max Input Capacitance: 740pF @ 4V
• Maximum Gate-Source Voltage: ±8V
• Maximum Rds On @ Id,Vgs: 40 mOhm @ 4.1A, 4.5V
• Product Status: Obsolete(EOL)
• Temperature Range: -50°C to 150°C (TJ)
• Supply and Demand Status: Balance