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SI2305DS-T1-E3

Part No SI2305DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 8V 3.5A 3-Pin SOT-23 T/R / MOSFET P-CH 8V 3.5A SOT23-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1245pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 52 mOhm @ 3.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 103786-SI2305DS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Family Name Si2305DS
Introduction Date April 17, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI2305DS-T1-E3 CAD Model

Description

  • Supply and Demand Status: Sufficient
  • Polarity: P-Channel
  • Power Dissipation: 1.25W (Ta)
  • Maximum Rds on @ Id,Vgs: 52 mOhm @ 3.5A, 4.5V
  • Product Status: Obsolete (EOL)
  • Application: Industrial, Power Management, and Portable Devices
  • Win Source Part Number: 103786-SI2305DS-T1-E3

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Pricing & Ordering

Quantity Unit Price Ext. Price
400+ $0.1253 $50.1200
975+ $0.1029 $100.3275
1,510+ $0.0996 $150.3960
2,075+ $0.0964 $200.0300
2,685+ $0.0932 $250.2420
3,590+ $0.0836 $300.1240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 400 pcs
Order Increment : 1 pcs
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