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SI2325DS-T1-GE3

Name: SI2325DS-T1-GE3
Brand: Vishay
SKU: 512477
Availability: InStock
Rating: 4.93 (502 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SI2325DS-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 150V 0.53A SOT-23
Datasheet	SI2325DS-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	150V
Continuous Drain Current at 25°C	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Gate-Source Threshold Voltage	4.5V @ 250μA
Max Gate Charge	12nC @ 10V
Max Input Capacitance	510pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	750mW (Ta)
Maximum Rds On at Id,Vgs	1.2 Ohm @ 500mA, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SOT-23-3 (TO-236)
Dimension	TO-236-3, SC-59, SOT-23-3
Win Source Part Number	1095741-SI2325DS-T1-GE3
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian SI2325DS-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SI2325DS-T1-GE3 is a P-channel MOSFET that is surface mountable.

Supply and Demand Status: Sufficient
Manufacturer: Vishay
Win Source Part Number: 1095741-SI2325DS-T1-GE3
Maximum Power Dissipation: 750mW
Drain-Source Breakdown Voltage: 150V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
105+	$0.4979	$52.2795
245+	$0.4086	$100.1070
380+	$0.3958	$150.4040
525+	$0.3830	$201.0750
680+	$0.3703	$251.8040
905+	$0.3320	$300.4600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 29,094 pieces

MOQ: 105 pcs

Order Increment : 1 pcs

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