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SI2347DS-T1-BE3

Part No SI2347DS-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 705 pF @ 15 V
Power Dissipation (Max) 1.2W (Ta), 1.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Other Names 742-SI2347DS-T1-BE3CT,742-SI2347DS-T1-BE3TR,742-SI2347DS-T1-BE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277920-SI2347DS-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI2347DS-T1-BE3 CAD Model

Description

The Vishay Siliconix SI2347DS-T1-BE3 is a P-Channel MOSFET transistor with a maximum drain to source voltage of 30V and a continuous drain current of 3.8A @ 25°C (Ta) and 5A @ 25°C (Tc).

  • Maximum On-Resistance: 42mOhm @ 3.8A and 10V
  • Gate Threshold Voltage: 2.5V @ 250µA
  • Power Dissipation: 1.2W (Ta) and 1.7W (Tc)
  • Package: Tape and reel package

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3519 $51.0255
350+ $0.2888 $101.0800
540+ $0.2797 $151.0380
740+ $0.2707 $200.3180
960+ $0.2617 $251.2320
1,280+ $0.2346 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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