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SI2347DS-T1-GE3

Part No SI2347DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 705pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095754-SI2347DS-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2347DS-T1-GE3 CAD Model

Description

The Vishay manufactured 1095754-SI2347DS-T1-GE3 is an active electronic component categorized under Discrete Semiconductor Products.

  • Technology: P-Channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Rds On @ Id,Vgs: 42 mOhm @ 3.8A, 10V
  • Maximum Input Capacitance: 705pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Mounting: SMD (SMT)
  • Case / Package: SOT-23-3
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5239 $52.3900
235+ $0.4299 $101.0265
365+ $0.4165 $152.0225
500+ $0.4030 $201.5000
645+ $0.3896 $251.2920
860+ $0.3493 $300.3980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,320 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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