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SI2365EDS-T1-GE3

Part No SI2365EDS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.9A TO-236
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 36nC @ 8V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 115047-SI2365EDS-T1-GE3
Family Name Si2365EDS
Introduction Date November 05, 2013
ECCN EAR99
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2365EDS-T1-GE3 CAD Model

Description

The Vishay Si2365EDS-T1-GE3 is a P-Channel MOSFET that is designed to offer high performance and reliability in a compact SMD package.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.9A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On @ Id,Vgs: 32 mOhm @ 4A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 36nC @ 8V
  • Applications: Power management, battery protection, and load switching
  • Package: TO-236
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8554 $51.3240
125+ $0.8013 $100.1625
195+ $0.7742 $150.9690
280+ $0.7201 $201.6280
365+ $0.6930 $252.9450
455+ $0.6659 $302.9845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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