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SI3410DV-T1-GE3

Part No SI3410DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A 6-TSOP / Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1295pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 4.1W (Tc)
Maximum Rds On at Id,Vgs 19.5 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064438-SI3410DV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si3410DV
Introduction Date October 16, 2007
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI3410DV-T1-GE3 CAD Model

Description

The Vishay Si3410DV MOSFET is a high-performance N-Channel power MOSFET designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A
  • Power Dissipation: 2W (Ta), 4.1W (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 33nC @ 10V
  • Maximum Input Capacitance: 1295pF @ 15V
  • Package: 6-TSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4193 $58.7020
340+ $0.3441 $116.9940
520+ $0.3333 $173.3160
720+ $0.3226 $232.2720
930+ $0.3119 $290.0670
1,240+ $0.2797 $346.8280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,032 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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