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Same model may have multiple batches, images only for reference.
SI3421DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3421DV-T1-GE3

Part No SI3421DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8A TSOP-6
Datasheet
SI3421DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2580pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Maximum Rds On at Id,Vgs 19.2 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095821-SI3421DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3421DV-T1-GE3 CAD Model

Description

The Vishay MOSFET is a P-channel power transistor with a maximum power dissipation of 2W @ Ta and 4.2W @ Tc.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 8A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 69nC @ 10V
  • Maximum Input Capacitance: 2580pF @ 15V
  • Maximum Rds On @ Id,Vgs: 19.2 mOhm @ 7A, 10V
  • Mounting: 6-TSOP package
  • Use: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2123 $50.9520
505+ $0.1989 $100.4445
785+ $0.1921 $150.7985
1,120+ $0.1787 $200.1440
1,455+ $0.1720 $250.2600
1,815+ $0.1653 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 88,845 pieces
MOQ: 240 pcs
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