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Same model may have multiple batches, images only for reference.
SI3435DV-T1-E3
Same model may have multiple batches, images only for reference.

SI3435DV-T1-E3

Part No SI3435DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 12V 4.8A 2W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 4.8 A
Drain to Source Resistance 73 mΩ
Drain to Source Voltage (Vdss) -12 V
Element Configuration Single
Fall Time 45 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.1 W
Min Operating Temperature -55 °C
Power Dissipation 1.1 W
Rise Time 45 ns
RoHS Compliant
Turn-Off Delay Time 90 ns
Win Source Part Number 1092821-SI3435DV-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3435DV-T1-E3 CAD Model

Description

The SI3435DV-T1-E3 is a transistor - FETs, MOSFETs - RF component that is compliant with RoHS regulations from Vishay.

  • Mounting Style: SMD mounting
  • Supply and Demand: currently in shortage
  • Drain to Source Voltage (Vdss): -12 V
  • Power Dissipation: 1.1 W
  • Continuous Drain Current (ID): 4.8 A
  • Category: Transistors - FETs, MOSFETs - RF

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