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SI3442BDV-T1-E3

Part No SI3442BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 5nC @ 4.5V
Max Input Capacitance 295pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 860mW (Ta)
Maximum Rds On at Id,Vgs 57 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028424-SI3442BDV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3442BDV-T1-E3 CAD Model

Description

The electronic component with Id 328639 is a MOSFET product manufactured by Vishay.

  • Win Source Part Number: 028424-SI3442BDV-T1-E3
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 3A
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6402 $51.2160
195+ $0.5253 $102.4335
295+ $0.5089 $150.1255
410+ $0.4925 $201.9250
530+ $0.4761 $252.3330
705+ $0.4268 $300.8940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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