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Same model may have multiple batches, images only for reference.
SI3445ADV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3445ADV-T1-E3

Part No SI3445ADV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 4.4A 6-TSOP
Datasheet
SI3445ADV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 19nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 097859-SI3445ADV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3445ADV-T1-E3 CAD Model

Description

The Vishay 097859-SI3445ADV-T1-E3 is a P-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Status: obsolete (EOL)
  • Supply: limited
  • Feature: Schottky diode
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds On: 42 mOhm @ 5.8A, 4.5V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 6-TSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2031 $50.7750
600+ $0.1667 $100.0200
930+ $0.1615 $150.1950
1,280+ $0.1563 $200.0640
1,655+ $0.1511 $250.0705
2,215+ $0.1355 $300.1325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
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