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Same model may have multiple batches, images only for reference.
SI3456BDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3456BDV-T1-E3

Part No SI3456BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.5A 6-TSOP
Datasheet
SI3456BDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 098201-SI3456BDV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3456BDV-T1-E3 CAD Model

Description

The Vishay 098201-SI3456BDV-T1-E3 is an N-channel MOSFET in a 6-TSOP package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.5A @ 25°C
  • Maximum Rds On at Id, Vgs: 35 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Power Dissipation: 1.1W (Ta)
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2510 $58.9850
565+ $0.2060 $116.3900
870+ $0.1996 $173.6520
1,200+ $0.1931 $231.7200
1,550+ $0.1866 $289.2300
2,075+ $0.1674 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,320 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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