The SI3458BDV-T1-E3 by Vishay is an N-channel MOSFET that is designed for use in various applications.

• Packaging: Reel - TR
• Mounting Type: SMD (SMT)
• Polarity: N-channel
• Technology: MOSFET
• Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
• Drive Voltage (max Rds On, min Rds On): 4.5V, 10V
• Temperature Range: -55°C to 150°C (TJ)
• Case or Package: 6-TSOP
• Dimension: SOT-23-6 Thin, TSOT-23-6
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current @ 25°C: 4.1A (Tc)
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 11nC @ 10V
• Maximum Input Capacitance: 350pF @ 30V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id, Vgs: 100 mOhm @ 3.2A, 10V