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Same model may have multiple batches, images only for reference.
SI3471DV-T1-E3
Same model may have multiple batches, images only for reference.

SI3471DV-T1-E3

Part No SI3471DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-ch Mosfet TSOP-6 12V 31MOHM @ 4.5V<AZ
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 5.1 A
Drain to Source Breakdown Voltage 12 V
Drain to Source Resistance 31 mΩ
Drain to Source Voltage (Vdss) -12 V
Element Configuration Single
Fall Time 50 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.1 W
Min Operating Temperature -55 °C
Power Dissipation 1.1 W
Rise Time 50 ns
RoHS Compliant
Turn-Off Delay Time 125 ns
Win Source Part Number 1092826-SI3471DV-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3471DV-T1-E3 CAD Model

Description

The SI3471DV-T1-E3 is a single element configuration transistor with a drain to source voltage of -12 V from Vishay.

  • Maximum Power Dissipation: 1.1 W
  • Continuous Drain Current: 5.1 A
  • Drain to Source Breakdown Voltage: 12 V
  • Drain to Source Resistance: 31 mΩ
  • Turn-Off Delay Time: 125 ns
  • Rise and Fall Time: 50 ns
  • Supply and Demand: currently in shortage
  • RoHS Compliant: yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5738 $60.2490
250+ $0.4709 $117.7250
380+ $0.4561 $173.3180
525+ $0.4414 $231.7350
680+ $0.4268 $290.2240
910+ $0.3825 $348.0750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 210 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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