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Same model may have multiple batches, images only for reference.
SI3476DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3476DV-T1-GE3

Part No SI3476DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 4.6A TSOP-6
Datasheet
SI3476DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 7.5nC @ 10V
Max Input Capacitance 195pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.6W (Tc)
Maximum Rds On at Id,Vgs 93 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095853-SI3476DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3476DV-T1-GE3 CAD Model

Description

The Vishay SI3476DV-T1-GE3 MOSFET is an N-channel type MOSFET that is rated for 2W power.

  • Component Category: discrete semiconductor products
  • Package: 6-TSOP
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 4.6A (Tc)
  • Supply and Demand Status: currently balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7486 $52.4020
165+ $0.6142 $101.3430
255+ $0.5950 $151.7250
350+ $0.5758 $201.5300
450+ $0.5567 $250.5150
605+ $0.4991 $301.9555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,130 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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