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Same model may have multiple batches, images only for reference.
SI7218DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7218DN-T1-GE3

Part No SI7218DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 24A 1212-8
Datasheet
SI7218DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A
Maximum Rds On at Id,Vgs 25 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 700pF @ 15V
Maximum Power Dissipation 23W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 064553-SI7218DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7218DN-T1-GE3 CAD Model

Description

The electronic component with Id 329796 is a dual N-Channel standard FET type manufactured by Vishay.

  • Manufacturer: Vishay
  • FET Type: dual N-Channel standard
  • Product Category: Discrete Semiconductor Product
  • Status: Active
  • Supply and Demand: Balanced
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 23W

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5029 $60.0696
57+ $2.0536 $117.0552
88+ $1.9901 $175.1288
120+ $1.9254 $231.0480
156+ $1.8619 $290.4564
208+ $1.6690 $347.1520
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Availability: 600 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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