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SI3483CDV-T1-GE3

Part No SI3483CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 6.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064455-SI3483CDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3483CDV-T1-GE3 CAD Model

Description

The Vishay SI3483CDV-T1-GE3 is a P-channel MOSFET component suitable for use in electronic equipment such as power supplies, computers, and telecommunication equipment.

  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.2978 $50.6260
360+ $0.2786 $100.2960
560+ $0.2690 $150.6400
805+ $0.2498 $201.0890
1,045+ $0.2402 $251.0090
1,305+ $0.2306 $300.9330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,985 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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