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Same model may have multiple batches, images only for reference.
SI3983DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3983DV-T1-E3

Part No SI3983DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.1A 6-TSOP
Datasheet
SI3983DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A
Maximum Rds On at Id,Vgs 110 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 7.5nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095877-SI3983DV-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3983DV-T1-E3 CAD Model

Description

The Vishay 445244 is a dual P-channel logic level gate FET that features a drain-source breakdown voltage of 20V and a continuous drain current of 2.1A @ 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.1A @ 25°C
  • Maximum Power Dissipation: 830mW
  • Maximum Rds on: 110 mOhm @ 2.5A, 4.5V
  • Status: obsolete (EOL)
  • Packaging: reel - TR
  • Maximum Gate Charge: 7.5nC @ 4.5V
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Mounting: SMD (SMT)
  • Package: 6-TSOP

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